70 vts process photodiodes vts__86 product description this series of planar, p on n, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as leds, ireds, flashtubes, incandescent lamps, lasers, etc. improved shunt resistance minimizes amplifier offset and drift in high gain systems. the solderable contact system on these photodiodes provides a cost effective design solution for many applications. absolute maximum ratings storage temperature: -40c to 150c series 20, 31 -40c to 105c series 30 operating temperature: -40c to 125c series 20, 31 -40c to 105c series 30 package dimensions inch (mm) case 44b anode (active) surface shown cathode is backside dimensions vts__86 l .100 (2.54) w .200 (5.08) active area .015 2 (10 2 ) electro-optical characteristics @ 25c (see also vts curves, page 67) symbol characteristic test conditions vts__86 units min. typ. max. i sc short circuit current h = 1000 lux, 2850 k 60 80 a tc i sc i sc temperature coefficient h = 1000 lux, 2850 k .20 %/c i d dark current h = 0, vr = 100 mv 10 100 na tc i d id temp. coefficient h = 0, vr = 100 mv +11 %/c r sh shunt resistance h = 0, vr = 10 mv 6.0 m ? c j junction capacitance h = 0, v = 0 v, 1 mhz 0.25 nf s r sensitivity @ 400 nm .18 0.20 a/w re responsivity 400 nm, 0.18 a/w 0.02 a/(w/cm 2 ) tc v oc sensitivity @ peak 925 nm 0.60 a/w t r /t f response time @ 1 k ? load vr = 1 v, 830 nm 0.75 sec v oc open circuit voltage h = 1000 lux, 2850 k 0.25 0.45 volts tc v oc v oc temperature coefficient h = 1000 lux, 2850 k -2.6 mv/c perkinelmer optoelectronics, 10900 page ave., st. louis, mo 63132 usa phone: 314-423-4900 fax: 314-423-3956 web: w ww.perkinelmer.com/opto
|
